Products   Deposition stages   EC-R series

EC-R series
Substrate at right angle to plane of mounting flange

The EC-R supports the substrate at a right-angle to the plane of the mounting flange. It can then provide continuous substrate rotation, tilt, heating and electrical biasing. It can also be mounted on UHVD's range of manipulators to provide motion in the X, Y and Z axes. The base EC-R configuration provides polar rotation to adjust the angle of incidence with respect to the deposition flux and sample heating. The modular EC-R concept provides the flexibility to select options such as azimuthal rotation to continuously rotate the substrate to maximise temperature and deposition uniformity.

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Key features

  • 2" to 6" substrate diameters
  • Substrate heating to 1200°C
  • Continuous azimuthal rotation
  • Polar rotation (tilt) up to +/- 180°
  • DC/RF substrate biasing
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Electrical biasing is also available, DC and/or RF, to facilitate sputter cleaning prior to deposition or for better control of deposition kinetics. ‘Faraday Dark Space Shielding’ is supplied as standard on all biased stages. This confines plasma to the substrate cradle region. Our proprietary substrate biasing technology provides unrivalled flicker-free performance, typically with zero maintenance and long operational life. X, Y and Z motion can then be added to tailor the stage to meet your specific application.

The concept of this stage was strongly influenced by a complete review of existing right-angled deposition stages to provide unrivalled performance and durability.

By stacking two magnetically-coupled MagiDrive rotary feedthroughs, UHV Design are able to achieve a dual axis, concentric rotation system which eliminates the head positioning gear train typically used in other designs. 

The absence of any bellows, O-rings or dynamic seals ensures clean, true UHV performance with high reliability making them ideal for critical applications.

Secure Sample Transfer

Using our range of magnetically coupled sample transfer arms with secure bayonet style sample holder provides reliable and secure sample transfer.

High temperature heating

By incorporating our latest heater module technology into this stage, improvements upon conventional designs have been achieved in terms of the ultimate temperature capability and uniformity and therefore deposition uniformity. Significant technology resides within the rotary head which enables continuous azimuthal rotation with high precision positioning whilst heating from ambient to 1200oC.

Refractory metal deposition shielding is provided as standard to protect the heating module.

The EC-R can also be configured specifically as a retrofit instrument for MBE systems such as the VG Semicon V80H. 

Download the EpiCentre brochure

If you like to request a quotation please complete our EpiCentre questionnaire which can be download using the link below and when completed please send to sales@uhvdesign.com:

Download EpiCentre questionnaire

EC-R Options & Configuration

Options  

1. Azimuthal rotation

Continuous azimuthal rotation to maximise temperature and deposition uniformity. Smooth, long-life rotation, typically up to 20rpm tolerant of high temperatures. 

2. Polar rotation

Provides the ability to tilt the sample with respect to a deposition flux. 

3. Thermocouple options

Type C and Type K options available with choice of UHV and HV fittings and height adjustment. HV versions include an o-ring sealed connector allowing thermocouple position to be adjusted to match the pyrometer reading of the substrate temperature, eliminating the need for calibration adjustments.

4. DC & RF bias

Our proprietary substrate biasing technology provides unrivalled flicker-free performance, typically with zero maintenance and long operational life. 

5. Z motion

Use of UHVD's linear shift mechanism to provide Z motion with strokes from 50 - 300mm and motorisation options. 

6.  XY motion

Precise X & Y motion up to +/- 19mm (+/-27mm vector) with motorisation options.

7. Solid Silicon Carbide heater element

Solid SiC heaters are manufactured from a conducting solid SiC material in the ß phase and are more robust in all respects. They are durable under mechanical or electrical shocking and when exposed to reactive gases including oxidising atmospheres at high temperature. They are also optimised to give the very best in temperature uniformity. 



STANDARD CONFIGURATION  
Substrate diameter 50mm (2") 100mm (4") 150mm (6")
CF150/8" OD system flange Available Not available Not available
CF200/10" OD system flange Available Available Not available
CF250/12" OD system flange Available Available Available
Polar Rotation    
Adjustable position Manual (1° resolution)  
HEATING      
Heater element Silicon Carbide coated graphite (SiCg) as standard (see options below)
Achievable temperature 1200°C (based on heating a Molybdenum sample)
STAGE MOTION OPTIONS  
TILT Rotation    
Stepper motorised 0.025° resolution  
Azimuthal Rotation    
Manually driven Manual thimble  
DC motorised Up to 60rpm (maximum 20rpm recommended with bias)
Stepper motorised Up to 60rpm (maximum 20rpm recommended with bias) 
XYZ Motion Options XL-T Range XL-R Range  
Z axis      
Z stroke range offered 50-300mm 50-1000mm  
Resolution manual 0.01mm 1mm  
Resolution stepper motorised 0.001mm 0.001mm  
XY axis      
Manual actuation +/- 15mm (+/-21mm vector) +/- 19mm (+/-27mm vector)
    X-Y resolution manual 0.001mm 0.01mm  
Motorised actuation +/- 14mm (+/-20mm vector) +/- 18mm (+/-25.5mm vector)
    X-Y Resolution stepper motorised 0.0025mm 0.005mm  
AXIS ALIGNMENT    
Adjustable position (manual) +/-2° N/A  
ADDITIONAL OPTIONS    
DC & RF bias DC bias ≤ 1kV, RF ≤ 40W (including dark space shielding)
Heater element  Solid Silicon Carbide (sSiC)
Insertion length (nominally 240mm) Customer specified  
Motorisation  Stepper or Smart Motor (DC only for azimuthal)
X,Y and Z encoders Option     
Azimuthal home position sensor Option     
Temperature measurement Type K or Type C thermocouple
Water cooling of head assembly (NOT substrate) to aid heat dissipation Option