Products   Deposition stages   GLAD series

GLAD series stages
Substrate at a variable glancing angle to the mounting flange

Glancing Angle Deposition (GLAD) is creating great interest in areas where structured three-dimensional deposition is required. Based on UHV Design's highly successful EpiCentre range, the GLAD stage provides an in-line solution (as with 
the EC-I Series) but with the addition of substrate tilt. Being an in-line stage, a large range of axial (Z) motion can be provided. 

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Key features

  • Continuous azimuthal rotation
  • Substrate temperature heating to 1200°C
  • DC bias ≤ 1 kV for sputter process modification
  • RF bias to 100W power for substrate cleaning prior to deposition
  • Z-axis travel up to 200mm
  • Optional rotation of the entire stage/tilt axis orientation
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By precisely controlling the polar and azimuthal rotations simultaneously, 
novel structures can be grown, which have, for example, columnular 
morphology or a nano-helical structure or are structured via anisotropic 
shadowing. Such materials have applications in many highly topical fields 
such as photonics, catalysis, bio-compatible materials and fuel cells. 

Being fully UHV compatible, the GLAD stage is eminently suitable for use with all the usual directional deposition sources, such as thermal evaporation, physical vapour deposition, pulsed laser deposition and magnetron sputtering.

Features

  • Continuous azimuthal rotation from 0.1 - 20rpm, but at any tilt angle from zero to +/- 85 degrees.
  • Substrate temperature heating to 1200°C, with solid Silicon Carbide technology option to provide durability in O2 rich environments.
  • DC bias ≤ 1 kV for sputter process modification – ultra-stable plasma during azimuthal rotation.
  • RF bias to 100W power for substrate cleaning prior to deposition. Ultra-stable plasma during azimuthal rotation.
  • Z-axis travel up to 200mm to accommodate different source geometries.
  • Optional rotation of the entire stage/tilt axis orientation to facilitate glancing angle deposition using out-of-plane sources. (Requires the use of a differentially pumped rotary feedthrough that can be fitted as an option.)

Download the EpiCentre brochure

If you like to request a quotation please complete our EpiCentre questionnaire which can be download using the link below and when completed please send to sales@uhvdesign.com:

Download EpiCentre questionnaire

GLAD Series Options

Options  

Deposition Height Adjustment

The deposition height adjustment option allows the Z position 
of the substrate to be adjusted by up to 200mm to optimise the distance from the deposition flux. Other height options available upon request. 


DC & RF Bias

Our proprietary substrate biasing technology provides unrivalled flicker-free performance, typically with zero maintenance and long operational life. 


Solid Silicon Carbide Heater Element

Solid SiC heaters are manufactured from a conducting solid SiC material in the ß phase and are more robust in all respects. They are durable under mechanical or electrical shocking and when exposed to reactive gases including oxidising atmospheres at high temperature. They are also optimised to give the very best in temperature uniformity. See Figure 1.


Thermocouple Options

Type C and Type K options available with choice of UHV and HV fittings and height adjustment.

Substrate Shutter

Manual or pneumatically actuated substrate shutter to control line-of-sight between substrate and deposition source.  See Figure 2.

Homing Sensor

Internal magnetic home switch to align the stage to within 0.1° for automated substrate transfer.



Figure 1. Solid Silicon Carbide (sSiC) heater element option

Figure2. Substrate shutter option

 

STANDARD CONFIGURATION
Substrate size 2" (50mm) 4" (100mm)
CF300 / 14" OD system flange Available Available
CF350 / 16.5" OD system flange Available Available
Heater element Silicon Carbide coated graphite (SiCg) as standard (see Options below)
Substrate rotation Continuous, Stepper motorised, 0.1 - 20 rpm
Substrate tilt Manual actuation  +/- 85o
Insertion length 240mm flange face to substrate centre
Deposition height adjustment None (see options below)
Thermocouple 1 x Type K  
Achievable temperature 1200°C (based on heating a Molybdenum sample)
OPTIONS    
DC & RF bias  DC bias ≤ 1kV, RF ≤ 100W (inc. dark space shielding - must use screened thermocouple options)
Shutter  Manual, pneumatic, steppper motorised
Heater element Solid Silicon Carbide (sSiC)
Thermocouple options   1 x (screened) Type K    1 x (screened) Type C
Deposition height adjustment up to 200mm (other values on request)
Deposition height automation 24 V DC Motor, stepper motor, Smart Motor, no motor* 
(*gearbox only fitted, customer supplies and fits NEMA 23 frame motor)
Substrate rotation 24 V DC motor or Smart Motor or no motor* 
(*gearbox only fitted, customer supplies and fits NEMA 23 frame motor)
Substrate tilt automation Stepper motor, Smart Motor, no motor* 
(*gearbox only fitted, customer supplies and fits NEMA 23 frame motor)
Homing sensor Internal magnetic switch
Custom insertion length Available on request
Stage / Tilt axis rotation (via DPRF) Available on request
Stage / Tilt axis rotation automation Available on request