Deposition stages are a crucial element in thin-film generation and advanced coating systems to increase the process efficiency and encourage increased substrate coverage. They can generally be characterised by the degrees of freedom they have to alter the position of substrates during operation. The selection of the appropriate deposition stage is a crucial part of workflow management and is greatly influenced by the applications they are required for.
Types of Deposition Stages
Static deposition stages can keep substrates firmly in the line of sight of the deposition source with the use of convenient mountings. These mountings can be constructed for a variety of sizes and orientations of substrates, however they are not able to rotate or modify material temperatures.
To increase deposition rates and encourage increased thin film uniformity, stages are created as ultra-high vacuum (UHV) devices. These devices have heating and rotating deposition stages in addition to optional radio frequency and direct current bias.
These attributes result in a sample substrate surface preparation and activation to aid removal of surface contaminants using RF plasma etching in addition to precise controlled crystal annealing prior to film growth with semiconducting, conducting or insulating substrate wafer samples.
Deposition stages can revolve substrates for thin film growth using temperature control alongside optional biasing in UHV conditions. This results in enhanced coating uniformity, film and interface stress relief, density as well as accelerated deposition rates. This produces superior film morphologies.
EpiCentre Deposition Stages and their Applications
The EC-I series is a deposition stage model which is available at UHV Design, it offers high level performance for a range of growth and deposition techniques, and can be used for molecular-beam epitaxy, sputtering and chemical vapor deposition. The EC-I series is well-suited to these applications as it can offer continuous substrate heating, biasing, rotation and facilities for substrate transfer whilst simultaneously preserving ultra-high vacuum compatibility. This deposition stage can be used for SEMI standard wafers from 2” to 200mm diameter.
EpiCentre deposition stages can also be used for substrate annealing, degassing in addition to other high temperature material modifications can also be carried out. Additionally, the GLAD deposition stage can be used alongside directional deposition sources such as thermal evaporation, pulsed laser deposition and magnetron sputtering.
At UHV Design, we provide a selection of in-line, right-angle, and glancing configurations in addition to modular designs for a range of specifications. If you would like to find out more about our deposition stage solutions, read our previous post exploring the basics of deposition stages. Or contact us today.