Heater modules

This cost-effective solution uses market-leading, cutting-edge heater technology. Along with complete sample heating solutions like the EpiCentre deposition stages, we also offer a range of individual heater modules. These are ideal for end-users to incorporate into their own heater stage designs. 

Key Features

  • High uniformity heating to 1200°C
  • Elements have a large radiating surface to gap ratio. This means they’re able to run at lower temperatures than conventional metal heaters
  • Refractory metal hot zone enables uncompromised performance at high temperatures
Heater modules

Heater Module Overview 

Our heater modules feature CVD processed heating elements, packaged in refractory metal cases. They’re highly versatile and can be used in:

  • vacuum applications for radiantly heating semiconductor wafers
  • holder supported samples
  • various other substrates to high temperatures. 

The immediate hot zone holding the element is constructed from refractory metals such as Molybdenum, Tantalum and ceramics. It doesn’t include any other materials that would compromise performance at high temperature. Therefore, these modules are particularly suitable for ultra-high vacuum applications. 

Choosing the right element 


Until recently, graphite heaters have been used in the majority of deposition stages. This is because they provide robust performance in UHV applications such as MBE. However, graphite heaters also oxidise and are consumed when run alongside high partial pressures of O2 at high temperature. With that in mind, other technologies can offer superior performance for sputtering applications involving high partial pressures of O2. 

SiCg Elements

Compared with PgG, Solid Silicon Carbide coated Graphite elements provide improved durability in oxidising atmospheres. Being an insulating form of SiC, holes are required in the coating to make an electrical connection. This means the underlying Graphite is exposed and vulnerable to oxidation at these locations.

sSiC Elements

Solid Silicon Carbide elements (see Figure 1) are manufactured from a conducting solid SiC material in the ß phase. This makes them more robust in all respects. They are durable to mechanical or electrical shocking and have reactive gas/oxidation immunity at temperature. They are also optimised to ensure the very best temperature uniformity. Because of the large radiating surface to gap ratio, all these elements run at considerably lower temperatures than metal wire heaters. Crucially, this ensures heater longevity. The typical ratio of heated element surface to meander gap is >5:1. This results in excellent substrate heating uniformity - even without rotation.

Product configuration tool

If you would like to discuss your project with our engineering team, please contact us.