GLAD series

For structured three-dimensional deposition

Glancing Angle Deposition (GLAD) is creating great interest in areas where structured three-dimensional deposition is required. Based on UHV Design's highly successful EpiCentre range, the GLAD stage provides an in-line solution (as with the EC-I Series) but with the addition of substrate tilt. And being an in-line stage, a large range of axial (Z) motion can also be provided.

Key Specifications

  • Continuous azimuthal rotation
  • Substrate temperature heating to 1200°C
  • DC bias ≤ 1 kV for sputter process modification
  • RF bias to 100W power for substrate cleaning prior to deposition
  • Z-axis travel up to 200mm
  • Optional rotation of the entire stage/tilt axis orientation
Glancing Angle Deposition (GLAD) in-line stage.

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How it works

By precisely and simultaneously controlling the polar and azimuthal rotations, novel structures can be grown. These have, for example, columnar morphology, nano-helical structures or are structured via anisotropic shadowing. Such materials have applications in many highly topical fields, e.g. photonics, catalysis, bio-compatible materials and fuel cells. As it’s fully UHV compatible, the GLAD stage is suitable for use with all the usual directional deposition sources, e.g. thermal evaporation, physical vapour deposition, pulsed laser deposition and magnetron sputtering.

Additional product detail

  • Continuous azimuthal rotation from 0.1 - 20rpm - at any tilt angle from zero to +/- 85 degrees
  • Substrate temperature heating to 1200°C, with a solid Silicon Carbide technology option. This provides durability in O2 rich environments
  • DC bias ≤ 1 kV for sputter process modification
  • RF bias to 100W power for substrate cleaning prior to deposition. 
  • Ultra-stable plasma during azimuthal rotation
  • Z-axis travel up to 200mm to accommodate different source geometries
  • Optional rotation of the entire stage/tilt axis orientation to facilitate glancing angle deposition using out-of-plane sources. This requires the use of a differentially pumped rotary feedthrough (optionally fitted)

Series options

Deposition Height Adjustment

The deposition height adjustment option allows the Z position 
of the substrate to be adjusted by up to 200mm to optimise the distance from the deposition flux. Other height options available upon request. 

DC & RF Bias

Our proprietary substrate biasing technology provides unrivalled flicker-free performance, typically with zero maintenance and long operational life. 

Solid Silicon Carbide Heater Element

Solid SiC heaters are manufactured from a conducting solid SiC material in the ß phase and are more robust in all respects. They are durable under mechanical or electrical shocking and when exposed to reactive gases including oxidising atmospheres at high temperature. They are also optimised to give the very best in temperature uniformity. See Figure 1.

Thermocouple Options

Type C and Type K options available with choice of UHV and HV fittings and height adjustment.

Substrate Shutter

Manual or pneumatically actuated substrate shutter to control line-of-sight between substrate and deposition source.  See Figure 2.

Homing Sensor

Internal magnetic home switch to align the stage to within 0.1° for automated substrate transfer.

Technical Specification

STANDARD CONFIGURATION
Substrate size 2" (50mm) 4" (100mm)
CF300 / 14" OD system flange Available Available
CF350 / 16.5" OD system flange Available Available
Heater element Silicon Carbide coated graphite (SiCg) as standard (see Options below)
Substrate rotation Continuous, Stepper motorised, 0.1 - 20 rpm
Substrate tilt Manual actuation  +/- 85o
Insertion length 240mm flange face to substrate centre
Deposition height adjustment None (see options below)
Thermocouple 1 x Type K  
Achievable temperature 1200°C (based on heating a Molybdenum sample)
OPTIONS    
DC & RF bias  DC bias ≤ 1kV, RF ≤ 100W (inc. dark space shielding - must use screened thermocouple options)
Shutter  Manual, pneumatic, steppper motorised
Heater element Solid Silicon Carbide (sSiC)
Thermocouple options   1 x (screened) Type K    1 x (screened) Type C
Deposition height adjustment up to 200mm (other values on request)
Deposition height automation 24 V DC Motor, stepper motor, Smart Motor, no motor* 
(*gearbox only fitted, customer supplies and fits NEMA 23 frame motor)
Substrate rotation 24 V DC motor or Smart Motor or no motor* 
(*gearbox only fitted, customer supplies and fits NEMA 23 frame motor)
Substrate tilt automation Stepper motor, Smart Motor, no motor* 
(*gearbox only fitted, customer supplies and fits NEMA 23 frame motor)
Homing sensor Internal magnetic switch
Custom insertion length Available on request
Stage / Tilt axis rotation (via DPRF) Available on request
Stage / Tilt axis rotation automation Available on request

If you would like to discuss your project with our engineering team, please contact us.